Leistungshalbleiterbauelement

Details

Veröffentlichungs-Nr.

EP2402997

Aktenzeichen

EP10167819

Anmeldetag

30. Juni 2010

Veröffentlichung

8. Februar 2012

Erteilung

8. Februar 2012

Rechtsraum

EP

IPC

H01L29/745H01L29/749

Abstract

A bipolar power semiconductor device (1) is provided with an emitter electrode (11) on an emitter side (12) and a collector electrode (15) on a collector side (16). The device has a trench gate electrode (2) and a structure with a plurality of layers of different conductivity types in the following order: at least one n doped source region (3), a p doped base layer (4), which surrounds the at least one source region (3), an n doped enhancement layer (5), a p doped additional well layer (62), an additional n doped enhancement layer (52), an additional p doped well layer (62), an n doped drift layer (7) and a p doped collector layer (8). The trench gate electrode (2) has a gate bottom (211), which is located closer to the collector side (16) than the additional enhancement layer bottom (531).

Anmelder

Firma

ABB Research Ltd.

Land

🇨🇭 Schweiz

Fachgebiete