Speicherelement mit einer Sicherung parallel zu einer Antifuse

Details

Veröffentlichungs-Nr.

EP2408001

Aktenzeichen

EP11005601

Anmeldetag

7. Juli 2011

Veröffentlichung

11. September 2019

Erteilung

11. September 2019

Rechtsraum

EP

IPC

H01L21/02H01L27/102H01L29/861G11C17/00G11C17/14H01L49/02// H01L27/10

Abstract

Embodiments extend the capability of fuse elements, anti-fuse elements, and combinations thereof to enable multi-time programmable memory elements. Accordingly, embodiments significantly reduce area requirements and control circuitry complexity of memory elements. Embodiments can be used in non-volatile memory storage, for example, and are suitable for use in system on chip (SoC) products. A memory element is provided and comprises a first terminal (N1) coupled to an N-doped region and a second terminal (N2) coupled to a P-doped region. The N-doped and P-doped regions form a polysilicon diode anti-fuse. A silicide layer connects the doped regions and forms a fuse in parallel with the anti-fuse.

Anmelder

Firmen

Avago Technologies International Sales Pte. Limited
Avago Technologies General IP (Singapore) Pte. Ltd.
Broadcom Corporation

Land

🇸🇬 Singapur

Fachgebiete