Halbleitervorrichtung und Ansteuerverfahren dafür

Details

Veröffentlichungs-Nr.

EP2416323

Aktenzeichen

EP11176423

Anmeldetag

3. August 2011

Veröffentlichung

8. März 2017

Erteilung

8. März 2017

Rechtsraum

EP

IPC

G11C11/405G11C11/4091G11C16/08G11C16/24G11C16/04

Abstract

A semiconductor device including a nonvolatile memory cell in which a writing transistor which includes an oxide semiconductor, a reading transistor which includes a semiconductor material different from that of the writing transistor, and a capacitor are included is provided. Data is written to the memory cell by turning on the writing transistor and applying a potential to a node where a source electrode (or a drain electrode) of the writing transistor, one electrode of the capacitor, and a gate electrode of the reading transistor are electrically connected, and then turning off the writing transistor, so that the predetermined amount of charge is held in the node. Further, when a p-channel transistor is used as the reading transistor, a reading potential is a positive potential.

Anmelder

Firma

Semiconductor Energy Laboratory Co., Ltd.

Land

🇯🇵 Japan

Fachgebiete