Verfahren zum molekularen Adhäsionsbonden bei geringem Druck

Details

Veröffentlichungs-Nr.

EP2418678

Aktenzeichen

EP11173513

Anmeldetag

12. Juli 2011

Veröffentlichung

15. Oktober 2014

Erteilung

15. Oktober 2014

Rechtsraum

EP

IPC

H01L21/762H01L21/68H01L21/67

Abstract

Method for molecular adhesion bonding between at least a first wafer (20) and a second wafer (30) comprising at least a step of mechanical alignment, a step of bringing the two wafers (20, 30) in contact and a step of initiating the propagation of a bonding wave between the two wafers. During the steps of mechanical alignment and bringing the two wafers in contact, the wafers are placed in an environment at a first pressure (P1) greater than or equal to a predetermined pressure threshold value. During the step of initiating the propagation of a bonding wave, the wafers (20, 30) are placed in an environment at a second pressure (P2) less than the said predetermined pressure threshold value.

Anmelder

Firmen

Soitec
S.O.I. Tec Silicon on Insulator Technologies

Land

🇫🇷 Frankreich

Fachgebiete