Mit Wärmeverwaltungsvorrichtungen verbundene Laserkristallkomponenten

Details

Veröffentlichungs-Nr.

EP2428596

Aktenzeichen

EP11173936

Anmeldetag

14. Juli 2011

Veröffentlichung

5. Mai 2021

Erteilung

5. Mai 2021

Rechtsraum

EP

IPC

C30B33/06C30B29/28C30B31/22// H01S3/042H01S3/06H01S3/16

Abstract

A method for preparing a surface of a YAG crystal for thermal bonding includes performing an ion implantation process to introduce nitrogen into a surface layer of the YAG crystal to replace depleted oxygen therein, to change surface energy of the surface layer of the YAG crystal and to provide desired bonding characteristics for the surface layer; and joining the ion implanted surface layer with a thermal management device configured to dissipate heat from the YAG crystal. Also, a micro-chip device having a YAG crystal whose surface is prepared with the above disclosed method is provided and a device for forming a metallization pattern on a surface of the YAG crystal is provided.

Anmelder

Firma

Raytheon Company

Land

🇺🇸 USA

Fachgebiete