Verfahren zur Herstellung von Elementen mit Chip, die mit Rillen zum Einschieben von Drähten versehen sind

EP2429006 Art A3 4. April 2012

Anmelder: Commissariat à l'Énergie Atomique et aux Énergies Alternatives 🇫🇷

Details

Veröffentlichungs-Nr.
EP2429006
Aktenzeichen
EP11354041
Anmeldetag
23. August 2011
Veröffentlichung
4. April 2012
Rechtsraum
EP
IPC
H01L33/48H01L33/62H01L23/00H01L21/60H01L23/14H01L23/498
Offizieller Volltext

Abstract

The process comprises providing a conducting track (26) on an interconnecting substrate (22), where the conducting track is arranged to link a bonding pad of an active face of a chip (20) to an area corresponding to a first wall of grooves (14a, 14b), growing a contact pad (16) on the conducting track at the level of area corresponding to the first wall of the groove by electrodeposition, assembling the chip on the substrate by its active face so that a side wall of the chip forms a bottom of the grooves, and machining the chip by its rear surface parallel to the substrate. The process comprises providing a conducting track (26) on an interconnecting substrate (22), where the conducting track is arranged to link a bonding pad of an active face of a chip (20) to an area corresponding to a first wall of grooves (14a, 14b), growing a contact pad (16) on the conducting track at the level of area corresponding to the first wall of the groove by electrodeposition, assembling the chip on the substrate by its active face so that a side wall of the chip forms a bottom of the grooves, machining the chip by its rear surface parallel to the substrate by measuring the distance between the rear face of the chip and the contact pad, stopping the machining step when the measured distance reaches a desired value, assembling a plate (24) on the rear face of the chip by pasting to form a second wall of the groove, depositing a continuous conductor base overlying the substrate and the conductive track by electroplating, growing micro-inserts on the continuous conductor base at the conductive track contacting with the bonding pad of the active face of the chip by electrodeposition, growing the bonding pad on the continuous base, removing the excess continuous base, and assembling the chip on the substrate so its bonding pad bears on the micro-inserts. The step of assembling the chip on the substrate comprises applying a quantity of polymerizable adhesive on the rear face of the chip at a liquefaction temperature of the adhesive, applying the plate onto the chip with a pressure to obtain a minimum thickness of adhesive between the chip and the plate by releasing excess adhesive, and heating the adhesive at a polymerization temperature while maintaining the pressure. The plate or the rear face of the chip is provided with cavities to collect excess adhesive released by pressure.

Anmelder

Firma
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
Land
🇫🇷 Frankreich
🇫🇷 Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Die Commissariat à l'Énergie Atomique et aux Énergies Alternatives (CEA) ist eine französische staatliche Forschungseinrichtung mit Schwerpunkt Kernenergie, alternative Energien und Grundlagenforschung. Das Patentportfolio konzentriert sich auf Halbleiter und elektrische Bauelemente sowie Mess- und Prüftechnik, ergänzt durch Software, Energietechnik und Werkstoffkunde. Anmeldungen sind seit 2000 durchgehend belegt.

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