Herstellungsverfahren für einen Fotomaskenrohling

Details

Veröffentlichungs-Nr.

EP2444517

Aktenzeichen

EP11186104

Anmeldetag

21. Oktober 2011

Veröffentlichung

3. Januar 2018

Erteilung

3. Januar 2018

Rechtsraum

EP

IPC

C23C14/06C23C14/34C23C14/56G03F1/00C23C14/00

Abstract

Provided is a silicon target material in which particles are not easily generated during a sputtering process and to form a low-defect (high quality) silicon-containing film. A silicon target material having a specific resistance of 20 ©·cm or more at room temperature is used for forming a silicon-containing film. The silicon target material may be polycrystalline or noncrystalline. However, when the silicon target material is single-crystalline, a more stable discharge state can be obtained. Also, a single-crystal silicon in which crystals are grown by an FZ method is a preferable material as a highly-pure silicon target material because its content of oxygen is low. Further, a target material having n-type conductivity and containing donor impurities is preferable to obtain stable discharge characteristics. Only a single or a plurality of silicon target materials according to the present invention may be used for sputtering film formation of the silicon-containing film.

Anmelder

Firma

Shin-Etsu Chemical Co., Ltd.

Land

🇯🇵 Japan

Fachgebiete