Verfahren zur Herstellung eines bipolaren Transistors und bipolarer Transistor

Details

Veröffentlichungs-Nr.

EP2458623

Aktenzeichen

EP10192803

Anmeldetag

26. November 2010

Veröffentlichung

25. Juni 2014

Erteilung

25. Juni 2014

Rechtsraum

EP

IPC

H01L21/331H01L29/10H01L29/732H01L21/8249H01L29/08

Abstract

Disclosed is a method of manufacturing a bipolar transistor comprising providing a substrate (10) including an active region (22); depositing a layer stack; forming a base window (38) over the active region in said layer stack; forming at least one pillar (40) in the base window, wherein a part of the pillar is resistant to polishing; depositing an emitter material (46) over the resultant structure, thereby filling said base window; and planarizing the deposited emitter material by polishing. A bipolar transistor manufactured in accordance with this method is also disclosed.

Anmelder

Firma

NXP B.V.

Land

🇳🇱 Niederlande

Fachgebiete