Herstellungsverfahren für eine lichtemittierende Diode

Details

Veröffentlichungs-Nr.

EP2498305

Aktenzeichen

EP12001526

Anmeldetag

6. März 2012

Veröffentlichung

21. September 2016

Erteilung

21. September 2016

Rechtsraum

EP

IPC

H01L33/00H01L33/20// H01L33/22H01L33/32

Abstract

An optical semiconductor element and a manufacturing method thereof that can improve the light extraction efficiency with maintaining the yield. The manufacturing method includes forming a plurality of recesses (60) arranged at equal intervals along a crystal axis of a semiconductor film (20) in a surface of the semiconductor film (20); and performing an etching process on the surface of the semiconductor film (20), thereby forming a plurality of protrusions (22a) arranged according to the arrangement form of the plurality of recesses (60) and deriving from the crystal structure of the semiconductor film (20) in the surface of the semiconductor film (20).

Anmelder

Firma

STANLEY ELECTRIC CO., LTD.

Land

🇯🇵 Japan

Fachgebiete