Lichtemittierendes Halbleiterbauelement

Details

Veröffentlichungs-Nr.

EP2509121

Aktenzeichen

EP12163208

Anmeldetag

4. April 2012

Veröffentlichung

9. März 2016

Erteilung

9. März 2016

Rechtsraum

EP

IPC

H01L33/42H01L33/40

Abstract

A semiconductor light emitting device includes first and second semiconductor layers, an active region, a transparent electrically-conducting layer 13, a reflecting structure 20, and a first electrode. The second semiconductor layer has a conductivity different from the first semiconductor layer. The active region is arranged between the first and second semiconductor layers. The transparent electrically-conducting layer 13 is arranged on or above the first semiconductor layer. The reflecting structure 20 is arranged on or above the transparent electrically-conducting layer 13. The first electrode is arranged on or above the reflecting structure 20, and electrically connected to the first semiconductor layer. The reflecting structure 20 includes at least a reflective layer 16. An intermediate layer 17 is interposed between the transparent electrically-conducting layer 13 and the reflecting structure 20. The intermediate layer 17 is formed of a material containing an element with larger ionization tendency than the reflective layer 16.

Anmelder

Firma

Nichia Corporation

Land

🇯🇵 Japan

Fachgebiete