Halbleitervorrichtung und Temperaturdatenerzeugungsverfahren

Details

Veröffentlichungs-Nr.

EP2511682

Aktenzeichen

EP12160958

Anmeldetag

23. März 2012

Veröffentlichung

19. Oktober 2016

Erteilung

19. Oktober 2016

Rechtsraum

EP

IPC

G01K7/01G01K15/00G05F3/30

Abstract

Improvement in the accuracy of a temperature sensor is aimed at, suppressing the number of the test temperature in a test process. The semiconductor device comprises a coefficient calculation unit which calculates up to the N-th order coefficient (N is an integer equal to or greater than one) of a correction function as an N-th order approximation of a characteristic function indicating correspondence relation of temperature data measured by a temperature sensor unit and temperature, based on N+1 pieces of the temperature data including a theoretical value at a predetermined temperature in the characteristic function and N measured values of the temperature data measured by the temperature sensor unit at N points of temperature; and a correction operation unit which generates data including information on temperature, by performing calculation using the correction function to which the coefficients calculated are applied, based on temperature data measured by the temperature sensor unit.

Anmelder

Firma

Renesas Electronics Corporation

Land

🇯🇵 Japan

Fachgebiete