Bipolare Diode und Verfahren zur deren Herstellung

Details

Veröffentlichungs-Nr.

EP2535940

Aktenzeichen

EP11169792

Anmeldetag

14. Juni 2011

Veröffentlichung

21. August 2013

Erteilung

21. August 2013

Rechtsraum

EP

IPC

H01L29/861H01L21/329H01L29/36// H01L29/06H01L29/32

Abstract

A bipolar diode (1) is provided having a drift layer (2) of a first conductivity type on a cathode side (13) and an anode layer (3) of a second conductivity type on an anode side (14). The anode layer (3) comprises a diffused anode contact layer (5) and a double diffused anode buffer layer (4). The anode contact layer (5) is arranged up to a depth of at most 5 µm and the anode buffer layer (4) is arranged up to a depth of 18 to 25 µm. The anode buffer layer (4) has a doping concentration between 8.0*10<15>and 2.0 * 10<16>cm<-3>in a depth of 5 µm and between 1.0*10<14>up to 5.0 * 10<14>cm<-3>in a depth of 15 µm, resulting in good softness of the device and low leakage current. Prior art diodes have either over all depths lower doping concentrations resulting in high leakage current or enhanced doping concentration resulting in bad softness.

Anmelder

Firma

ABB Technology AG

Land

🇨🇭 Schweiz

Fachgebiete