Halbleiterbauelement

Details

Veröffentlichungs-Nr.

EP2549481

Aktenzeichen

EP12172625

Anmeldetag

19. Juni 2012

Veröffentlichung

28. September 2016

Erteilung

28. September 2016

Rechtsraum

EP

IPC

G11C11/417G11C5/14G11C7/22

Abstract

In a semiconductor device, memory modules each having a low power consumption mode that is enabled and disabled by a control signal belong to a memory block. A transmission path of the control signal is provided such that the control signal is inputted in parallel to the memory module via an inside-of-module path, and such that the control signal is outputted by a particular memory module of the memory modules via the inside-of-module path to a downstream outside-of-module path. The particular memory module in the memory block is selected such that it has a greater storage capacity than the other memory modules belonging to this same memory block have.

Anmelder

Firma

Renesas Electronics Corporation

Land

🇯🇵 Japan

Fachgebiete