Zusammensetzung zur Bildung einer siliciumhaltigen Resistunterschichtfolie, und Strukturierungsverfahren damit

Details

Veröffentlichungs-Nr.

EP2560049

Aktenzeichen

EP12005790

Anmeldetag

9. August 2012

Veröffentlichung

22. Juli 2015

Erteilung

22. Juli 2015

Rechtsraum

EP

IPC

G03F7/09G03F7/11G03F7/075G03F7/32G03F7/40H01L21/00

Abstract

The present invention provides a composition for forming a silicon-containing resist underlayer film, wherein the composition contains: a component (A) comprising at least one or more compounds selected from the group consisting of a polymer having repeating units shown by the following general formulae (1-1a) and (1-1b) and being capable of generating a phenolic hydroxyl group, a hydrolysate of the polymer, and a hydrolysis-condensate of the polymer, and a component (B) which is a silicon-containing compound obtained by hydrolysis-condensation of a mixture containing, at least, one or more hydrolysable silicon compounds represented by the following general formula (2) and one or more hydrolysable silicon compounds represented by the following general formula (3). There can be provided a composition for forming a resist underlayer film applicable not only to a resist pattern obtained in a negative development but also to a resist pattern obtained in a conventional positive development, and a patterning process using this composition. R 11 m11 R 12 m12 R 13 m13 Si(OR 14 ) (4-m11-m12-m13) (2) Si(OR 15 ) 4 (3)

Anmelder

Firma

Shin-Etsu Chemical Co., Ltd.

Land

🇯🇵 Japan

Fachgebiete