Halbleiterbauelement

Details

Veröffentlichungs-Nr.

EP2575172

Aktenzeichen

EP12176514

Anmeldetag

16. Juli 2012

Veröffentlichung

30. September 2015

Rechtsraum

EP

IPC

H01L27/088H01L23/495

Abstract

A semiconductor device is improved in reliability. A switching power MOSFET and a sense MOSFET for sensing a current flowing in the power MOSFET, which is smaller in area than the power MOSFET, are formed in one semiconductor chip. The semiconductor chip is mounted over a chip mounting portion via a conductive bonding material, and sealed in a resin. Over the main surface of the semiconductor chip, a metal plate is bonded to a source pad electrode of the power MOSFET. In the plan view, the metal plate does not overlap a sense MOSFET region where the sense MOSFET is formed. The metal plate is bonded to the source pad electrode so as to surround three of the sides of the sense MOSFET region.

Anmelder

Firma

Renesas Electronics Corporation

Land

🇯🇵 Japan

Fachgebiete