Überspannungs-ESD- und Überspannungsschutz mit CMOS-Einstellung für LED-Anwendung

Details

Veröffentlichungs-Nr.

EP2590218

Aktenzeichen

EP12180332

Anmeldetag

13. August 2012

Veröffentlichung

4. Juni 2014

Erteilung

4. Juni 2014

Rechtsraum

EP

IPC

H01L27/02H05B33/08

Abstract

Various embodiments relate to a light emitting diode protection circuit, including: a plurality of diodes connected in series; an input connected to a first diode of the plurality of diodes; an output; a first resistor connected between the plurality of diodes and the output; a transistor with a gate connected to a junction between the first resistor and the plurality of diodes and a source connected to the output; a second resistor connected between the input and drain of the transistor; and a silicon controlled rectifier (SCR) with an anode connected to the input, a base connected to the drain of the transistor, and a cathode connected to the output. <img class="EMIRef" id="135545222-iaf01" />

Anmelder

Firma

NXP B.V.

Land

🇳🇱 Niederlande

Fachgebiete