Verfahren zur Herstellung eines Resonanzwandlers

Details

Veröffentlichungs-Nr.

EP2599747

Aktenzeichen

EP12195311

Anmeldetag

3. Dezember 2012

Veröffentlichung

26. Oktober 2016

Erteilung

26. Oktober 2016

Rechtsraum

EP

IPC

B81C1/00H03H3/007H04R31/00

Abstract

A method of manufacturing a resonant transducer having a vibration beam includes: (a) providing an SOI substrate including: a first silicon layer; a silicon oxide layer on the first silicon layer; and a second silicon layer on the silicon oxide layer; (b) forming a first gap and second gap through the second silicon layer by etching the second silicon layer using the silicon oxide layer as an etching stop layer; (c) forming an impurity diffusion source layer on the second silicon layer; (d) forming an impurity diffused layer in a surface portion of the second silicon layer; (e) removing the impurity diffusion source layer through etching; and (f) removing at least a portion of the silicon oxide layer through etching such that an air gap is formed between the first silicon layer and a region of the second silicon layer surrounded by the first and second gaps. <img class="EMIRef" id="144868370-iaf01" /> <img class="EMIRef" id="144868370-iaf02" /> <img class="EMIRef" id="144868370-iaf03" /> <img class="EMIRef" id="144868370-iaf04" />

Anmelder

Firma

Yokogawa Electric Corporation

Land

🇯🇵 Japan

Fachgebiete