Drahtlose Kommunikationsvorrichtung und Halbleitergehäusevorrichtung mit einem dafür vorgesehenen Leistungsverstärker

Details

Veröffentlichungs-Nr.

EP2600525

Aktenzeichen

EP12194494

Anmeldetag

30. April 2009

Veröffentlichung

9. April 2014

Rechtsraum

EP

IPC

H03F3/189H03F3/191H01L23/64H01L23/66H03F3/193H03F3/24H03F3/45H03F3/195

Abstract

A semiconductor package device (300) comprises a first amplifier block (310), at least one further amplifier block (320), and at least one differential inductance (360) operably coupled between a first plurality of elements (490) of the output (314) of a first active component (312) of the first amplifier block (310) and a second plurality of elements (495) of the output (324) of a first active component (322) of the at least one further amplifier block (320). The differential inductance (360) is arranged such that a uniform inductance is provided between the first plurality of elements (490) of the first active component (314) of the first amplifier block (310) and the second plurality elements (495) of the second active component (324) of the at least one further amplifier block (320).

Anmelder

Firma

Freescale Semiconductor, Inc.

Land

🇺🇸 USA

Fachgebiete