III-Nitrid-Epitaxialsubstrat und Vorrichtung zum Emittieren von tiefem Ultraviolettlicht unter seiner Verwendung

Details

Veröffentlichungs-Nr.

EP2615650

Aktenzeichen

EP13000146

Anmeldetag

11. Januar 2013

Veröffentlichung

24. Dezember 2014

Erteilung

24. Dezember 2014

Rechtsraum

EP

IPC

H01L33/12H01L21/02

Abstract

A III nitride epitaxial substrate which makes it possible to obtain a deep ultraviolet light emitting device with improved light output power is provided. A III nitride epitaxial substrate 10 includes a substrate 12, an AIN buffer layer 14, a first superlattice laminate 16, a second superlattice laminate 18 and a III nitride laminate 20 in this order. The III nitride laminate 20 includes an active layer 24 including an Al<α>Ga<1-α>N (0.03 ≤α) layer. The first superlattice laminate 16 includes Al<a>Ga<1-a>N layers 16A and Al<b>Ga<1-b>N (0.9 <b≤ 1) layers 16B which are alternately stacked, whereα<aanda<bhold. The second superlattice laminate 18 includes repeated layer sets each having an Al<x>Ga<1-x>N layer 18A, an Al<y>Ga<1-y>N layer 18B, and an Al<z>Ga<1-z>N (0.9 <z≤ 1) layer 18C, whereα < x and x < y<zhold.

Anmelder

Firma

DOWA Electronics Materials Co., Ltd.

Land

🇯🇵 Japan

Fachgebiete