Siliciumkarbid-Halbleitervorrichtung und Verfahren zur Herstellung einer Siliciumkarbid-Halbleitervorrichtung

Details

Veröffentlichungs-Nr.

EP2626905

Aktenzeichen

EP13150810

Anmeldetag

10. Januar 2013

Veröffentlichung

21. Januar 2015

Rechtsraum

EP

IPC

H01L29/16H01L29/78H01L29/66H01L29/06

Abstract

A silicon carbide semiconductor device and a method for manufacturing it, wherein the device comprises the following features. A first region (11) of a silicon carbide layer (10) constitutes a first surface (F1), and is of a first conductivity type. A second region (12) is provided on the first region (11), and is of a second conductivity type. A third region (13) is provided on the second region (12), and is of the first conductivity type. A fourth region (14) is provided in the first region (11), located away from each of the first surface (F1) and the second region (12), and is of the second conductivity type. A gate insulation film (21) is provided on the second region (12) so as to connect the first region (11) with the third region (13). A gate electrode (30) is provided on the gate insulation film (21). A first electrode (31) is provided on the first region (11). A second electrode (32) is provided on the third region (13).

Anmelder

Firma

Sumitomo Electric Industries, Ltd.

Land

🇯🇵 Japan

Fachgebiete