Halbleiterkathode und Verfahren zu deren Herstellung

Details

Veröffentlichungs-Nr.

EP2642503

Aktenzeichen

EP13160697

Anmeldetag

22. März 2013

Veröffentlichung

28. September 2022

Erteilung

28. September 2022

Rechtsraum

EP

IPC

H01J1/34H01J9/12H01J31/50H01J31/26

Abstract

A semiconductor photocathode includes an Al X Ga 1-X N layer (0 ¤ X < 1) bonded to a glass substrate via an SiO 2 layer and an alkali-metal-containing layer farmed on the Al X Ga 1-X N layer. The Al X Ga 1-X N layer includes a first region, a second region, an intermediate region between the first and second regions. The second region has a semiconductor superlattice structure formed by laminating a barrier layer and a well layer alternately, the intermediate region has a semiconductor superlattice structure formed by laminating a barrier layer and a well layer alternately. When a pair of adjacent barrier and well layers is defined as a unit section, an average value of a composition ratio X of Al in a unit section decreases monotonously with distance from an interface position between the second region and the SiO 2 layer at least in the intermediate region.

Anmelder

Firmen

Sanken Electric Co., Ltd.
Hamamatsu Photonics K.K.
Sanken Electric Co., Ltd.

Land

🇯🇵 Japan

Fachgebiete