Herstellungsverfahren für ein Halbleiterbauelement mit Substratdurchkontaktierung

Details

Veröffentlichungs-Nr.

EP2648214

Aktenzeichen

EP12163391

Anmeldetag

5. April 2012

Veröffentlichung

12. Juni 2019

Erteilung

12. Juni 2019

Rechtsraum

EP

IPC

H01L21/768H01L23/48

Abstract

The semiconductor device comprises a substrate (1) of semiconductor material with a main surface (11) and an opposite surface (12), an integrated circuit component (2) in the substrate at or near the main surface, a structured metal plane (3) at a distance from the substrate above the main surface, a dielectric layer (4) between the metal plane and the substrate, an electrical interconnect (5) between the metal plane and the integrated circuit component, the interconnect traversing the dielectric layer, and an interconnection via (6) comprising a metallization (7) leading through the substrate between the main surface and the opposite surface. The metallization is connected to the metal plane via a further electrical interconnect (8) traversing the dielectric layer.

Anmelder

Firmen

ams AG
austriamicrosystems AG

Land

🇦🇹 Österreich

Fachgebiete