Gruppe 13 Nitrid-Halbleitervorrichtung und Verfahren zu ihrer Herstellung

Details

Veröffentlichungs-Nr.

EP2662884

Aktenzeichen

EP12167365

Anmeldetag

9. Mai 2012

Veröffentlichung

1. April 2015

Erteilung

1. April 2015

Rechtsraum

EP

IPC

H01L21/285H01L29/45H01L29/66H01L29/20

Abstract

Disclosed is a semiconductor device comprising a substrate (10); at least one semiconducting layer (12) comprising a nitride of a group 13 element on said substrate; and an ohmic contact (20) on the at least one semiconducting layer, said ohmic contact comprising a silicon-comprising portion (22) on the at least one semiconducting layer and a metal portion (24) adjacent to and extending over said silicon-comprising portion, the metal portion comprising titanium and a further metal. A method of manufacturing such a semiconductor device is also disclosed.

Anmelder

Firma

NXP B.V.

Land

🇳🇱 Niederlande

Fachgebiete