Elektronische Vorrichtung mit RF-LDMOS-Transistor mit verbesserter Robustheit

Details

Veröffentlichungs-Nr.

EP2665187

Aktenzeichen

EP12167901

Anmeldetag

14. Mai 2012

Veröffentlichung

20. Juli 2016

Erteilung

20. Juli 2016

Rechtsraum

EP

IPC

H03K17/0814

Abstract

The invention relates to an electronic device comprising an RF-LDMOS transistor (1) and a protection circuit (2) for the RF-LDMOS transistor. The protection circuit (2) comprises: i) an input terminal (Ni) coupled to a drain terminal (Drn) of the RF-LDMOS transistor (1); ii) a clipping node (Nc); iii) a clipping circuit (3) coupled to the clipping node (Nc) for substantially keeping the voltage on the clipping node (Nc) below a predefined reference voltage, wherein the predefined reference voltage is designed to be larger than the operation voltage on the drain terminal (Drn) and lower than a trigger voltage of a parasitic bipolar transistor that is inherently present in the RF-LDMOS transistor; iv) a capacitance (Ct) coupled between the clipping node (Nc) and a further reference voltage terminal (Gnd), and v) a rectifying element (D1, D2) connected with its anode terminal to the input terminal (Ni) and with its cathode terminal to the clipping node (Nc). The invention provides an RF-LDMOS transistor having an improved RF ruggedness, while not, or at least to a much lesser extent, compromising the RF performance of the RF-LDMOS transistor.

Anmelder

Firmen

Ampleon Netherlands B.V.
Samba Holdco Netherlands B.V.
NXP B.V.

Land

🇳🇱 Niederlande

Fachgebiete