Mit einer Einkapselungsschicht überzogenes Halbleiterelement, Herstellungsverfahren dafür und Halbleitervorrichtung

Details

Veröffentlichungs-Nr.

EP2680330

Aktenzeichen

EP13174284

Anmeldetag

28. Juni 2013

Veröffentlichung

20. Januar 2016

Rechtsraum

EP

IPC

H01L33/52

Abstract

A method for producing an encapsulating layer-covered semiconductor element (10) includes the steps of preparing a support sheet (1) including a hard support board (2) formed with a through hole (21) passing through in a thickness direction and a pressure-sensitive adhesive layer (3) laminated on a surface at one side in the thickness direction of the support board (2) so as to cover the through hole (21); disposing a semiconductor element (4) on a surface at one side in the thickness direction of the pressure-sensitive adhesive layer (3) in opposed to the through hole (21) in the thickness direction; covering the semiconductor element (4) with an encapsulating layer (5) to produce an encapsulating layer-covered semiconductor element (10); and inserting a pressing member (14) into the through hole (21) from the other side in the thickness direction to peel the encapsulating layer-covered semiconductor element (10) from the pressure-sensitive adhesive layer (3).

Anmelder

Firma

NITTO DENKO CORPORATION

Land

🇯🇵 Japan

Fachgebiete