CMOS-Vorrichtung mit Silizium und Germanium und Herstellungsverfahren dafür

Details

Veröffentlichungs-Nr.

EP2682983

Aktenzeichen

EP12174733

Anmeldetag

3. Juli 2012

Veröffentlichung

31. August 2016

Erteilung

31. August 2016

Rechtsraum

EP

IPC

H01L21/8238H01L21/84H01L27/12H01L27/092

Abstract

A CMOS device is described comprising silicon and germanium, a substrate (Si or Silicon on insulator), a buffer layer on the substrate, the buffer layer comprising Si 1-x ,Ge x a local nMOS channel layer element of a first FINFET device on the buffer layer (Si 1-z ,Ge z with z<x), and a local pMOS channel layer element of a second FINFET device on the buffer layer (Si 1-y ,Ge y with y>x); wherein with x < 0.50 and wherein the nMOS channel layer element and the pMOS channel layer element extend from a surface defined by a common upper surface of the buffer layer, and are part of respective FINFET structures; and associated method.

Anmelder

Firma

IMEC

Land

🇧🇪 Belgien

Fachgebiete