Herstellungsverfahren für Halbleitervorrichtungen

Details

Veröffentlichungs-Nr.

EP2693462

Aktenzeichen

EP12005685

Anmeldetag

31. Juli 2012

Veröffentlichung

1. Juni 2016

Erteilung

1. Juni 2016

Rechtsraum

EP

IPC

H01L21/324H01L21/02

Abstract

A method for reducing defects from at least one active layer is disclosed, the active layer being part of a semiconductor in a device, and the active layer at least laterally being defined by an isolation structure and being physically in contact therewith by means of a contact interface, the isolation structure and the active layer(s) abutting on a common substantially planar surface; - providing a patterned stress inducing layer on the common substantially planar surface, the stress inducing layer being adapted for inducing a stress field in the active layer, the induced stress field resulting in a shear stress on defects present in the active layer; - performing an anneal step; to thereby induce a movement of the defects towards the contact interface; and removing the patterned stress inducing layer from the common substantially planar surface.

Anmelder

Firma

IMEC

Land

🇧🇪 Belgien

Fachgebiete