Halbleiterbauelement und Batteriespannungsüberwachungsvorrichtung

EP2700965 Art B1 7. Oktober 2020

Anmelder: Renesas Electronics Corporation 🇯🇵

Details

Veröffentlichungs-Nr.
EP2700965
Aktenzeichen
EP13179215
Anmeldetag
5. August 2013
Veröffentlichung
7. Oktober 2020
Erteilung
7. Oktober 2020
Rechtsraum
EP
IPC
G01R31/36G01R19/165H02J7/00
Offizieller Volltext

Abstract

A semiconductor device is provided for measuring voltage of each of plural unit cells series-coupled in multi-stage and configuring an assembled battery. While satisfying the functional safety standards with dual-redundancy of the function of battery voltage monitoring and fault monitoring, the semiconductor device can realize the measurement of a battery voltage, the detection of overcharge/overdischarge, and the detection of disconnection between a node of unit cells and a terminal, the latter two being the function of fault monitoring, in a circuit formed on a single semiconductor substrate. The semiconductor device is provided with two terminals to be coupled to two nodes which are both electrodes of a unit cell and are coupled with other unit cells in plural unit cells configuring an assembled battery, and a voltage measurement circuit which measures the inter-terminal voltage between the two terminals. The semiconductor device is provided with a down-convert level shifter circuit which converts the inter-terminal voltage into a low-potential-side inter-terminal voltage on the basis of a ground potential, and a comparator circuit which compares the converted low-potential-side inter-terminal voltage with a predetermined reference voltage. The semiconductor device is also provided with an up-convert level shifter circuit which converts a low-potential-side shunt control signal on the basis of the ground potential into a high-potential-side shunt control signal, and a switch which short-circuits the two terminals via a resistor on the basis of the converted high-potential-side shunt control signal.

Anmelder

Firma
Renesas Electronics Corporation
Land
🇯🇵 Japan
🇯🇵 Renesas Electronics

Japanischer Halbleiterhersteller mit Sitz in Tokio, spezialisiert auf Mikrocontroller, analoge Bauelemente und Halbleiterlösungen unter anderem für die Automobil- und Industrieelektronik.

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