Verfahren zum Herstellen eines Durchkontaktierungssubstratwegs in einer Halbleitervorrichtung und Halbleitervorrichtung mit dem Durchkontaktierungssubstratweg

Details

Veröffentlichungs-Nr.

EP2790211

Aktenzeichen

EP13163167

Anmeldetag

10. April 2013

Veröffentlichung

20. Juni 2018

Erteilung

20. Juni 2018

Rechtsraum

EP

IPC

H01L21/768H01L23/48

Abstract

The method comprises the steps of arranging an intermetal dielectric (2) on or above a main surface (10) of a semiconductor body (1) and at least one metal layer (5, 5') in the intermetal dielectric, and forming a via opening (3) from a rear surface (11) towards the metal layer. A stop layer (4) of electrically conductive material is arranged at the metal layer between the metal layer and the semiconductor body, and the via opening is formed at least up to the stop layer but not into the metal layer. The semiconductor device has a stop layer (4) between a section (5) of the metal layer and a metallization (19) of a through-substrate via that is arranged in the via opening, and an electrically conductive liner (6, 6') between the metal layer and the semiconductor body.

Anmelder

Firmen

ams AG
AMS AG

Land

🇦🇹 Österreich

Fachgebiete