Halbleitervorrichtung und elektronische Vorrichtung

Details

Veröffentlichungs-Nr.

EP2814058

Aktenzeichen

EP14170897

Anmeldetag

3. Juni 2014

Veröffentlichung

30. September 2020

Erteilung

30. September 2020

Rechtsraum

EP

IPC

H01L23/495H01L21/48H01L23/552H01L29/739H01L23/00H01L23/538H01L29/78

Abstract

A semiconductor device and an electronic device are improved in performances by supporting a large current. An emitter terminal protrudes from a first side of a sealing body, and signal terminals protrude from a second sides of the sealing body. Namely, the side of the sealing body from which the emitter terminal protrudes and the side of the sealing body from which the signal terminals protrude are different. More particularly, the signal terminals protrude from the side of the sealing body opposite the side thereof from which the emitter terminal protrudes. Further, a second semiconductor chip including a diode formed therein is mounted over a first surface of a chip mounting portion in such a manner as to be situated between the emitter terminal and the a first semiconductor chip including an IGBT formed therein in plan view.

Anmelder

Firma

Renesas Electronics Corporation

Land

🇯🇵 Japan

Fachgebiete