Selbstgleichrichtendes RRAM-Element

Details

Veröffentlichungs-Nr.

EP2814073

Aktenzeichen

EP13172187

Anmeldetag

14. Juni 2013

Veröffentlichung

15. Februar 2017

Erteilung

15. Februar 2017

Rechtsraum

EP

IPC

H01L45/00H01L27/24

Abstract

A memory cell (10) comprises a first electrode (11) and a second electrode (12) made of conductive or semiconductive material, a resistance switching element (13) in between the first electrode (11) and the second electrode (12), and a tunnel rectifier (14) in between the resistance-switching element (13) and the first electrode (11). The tunnel rectifier (14) comprises a multi-layer tunnel stack. The multi-layer tunnel stack comprises a stack of a least two dielectric layers (15, 16) each defined by a dielectric constant and a conduction band offset, wherein one of the dielectric layers has a higher dielectric constant and a lower conduction band offset than any of the other dielectric layers.

Anmelder

Firma

IMEC VZW

Land

🇧🇪 Belgien

Fachgebiete