Dicke Kupferdruckpasten für Aluminiumnitridsubstrate

Details

Veröffentlichungs-Nr.

EP2822000

Aktenzeichen

EP13003358

Anmeldetag

3. Juli 2013

Veröffentlichung

21. Oktober 2020

Erteilung

21. Oktober 2020

Rechtsraum

EP

IPC

H01L23/15H01L23/498H01L21/48H05K1/09H05K1/03H05K3/38H01B1/22

Abstract

An electroconductive paste for use on an aluminum nitride substrate comprising a copper particle, a glass frit, an adhesion promoter which is at least one selected from the group consisting of cuprous oxide, titanium oxide, zirconium oxide, boron resinate, zirconium resinate, amorphous boron, lithium phosphate, bismuth oxide, aluminum oxide, and zinc oxide, and an organic vehicle. The invention also provides a method of forming copper conductor on an aluminum nitride substrate using electroconductive paste compositions described herein, comprising (i) depositing a first layer of base layer electroconductive paste on an aluminunn nitride substrate; (ii) drying the aluminum nitride substrate with the deposited base layer electroconductive paste; (iii) subjecting the deposited base layer electroconductive paste and the aluminum nitride substrate to a temperature of about 900°C to about 1000°C in a nitrogen atmosphere; (iv) depositing a second layer of a top layer electroconductive paste on the substrate; (v) drying the aluminum nitride substrate with the deposited top layer elertroconductive paste; and (vi) subjecting the deposited layers and the aluminum nitride substrate to a temperature of about 900°C to about 1000°C in a nitrogen atmosphere.

Anmelder

Firma

Heraeus Precious Metals North America Conshohocken LLC

Land

🇺🇸 USA

Fachgebiete