Transistoren auf Nitridbasis und Herstellungsverfahren dafür

Details

Veröffentlichungs-Nr.

EP2843708

Aktenzeichen

EP14182215

Anmeldetag

26. August 2014

Veröffentlichung

15. April 2015

Rechtsraum

EP

IPC

H01L29/78H01L29/66

Abstract

A method of fabricating a nitride-based transistor is provided. The method includes sequentially forming a first nitride-based semiconductor layer doped with first type dopants, a second nitride-based semiconductor layer doped with second type dopants, and a third nitride-based semiconductor layer doped with the first type dopants on a substrate. A first trench is formed to penetrate the third and second nitride-based semiconductor layers and to extend into the first nitride-based semiconductor layer. A fourth nitride-based semiconductor layer doped with the first type dopants is formed to fill the first trench. A second trench is formed in the fourth nitride-based semiconductor layer. A gate electrode is formed in the second trench. A source electrode is formed to be electrically connected to at least one of the third and fourth nitride-based semiconductor layers, and a drain electrode is formed to be electrically connected to the first nitride-based semiconductor layer.

Anmelder

Firma

Seoul Semiconductor Co., Ltd.

Land

🇰🇷 Südkorea

Fachgebiete