Verfahren zur Herstellung von ferroelektrischer Dünnschichtvorrichtung mit Niobat-System

Details

Veröffentlichungs-Nr.

EP2843723

Aktenzeichen

EP14157238

Anmeldetag

28. Februar 2014

Veröffentlichung

31. Januar 2018

Erteilung

31. Januar 2018

Rechtsraum

EP

IPC

H01L41/187H01L41/332

Abstract

It is an objective of the present invention to provide a method for micro-fabricating a ferroelectric thin film device (20) utilizing a lead-free niobate-system ferroelectric material with a high dimensional accuracy and at lower than conventional cost. There is provided a method for manufacturing a niobate-system ferroelectric thin film device (20), including: a lower electrode film formation step of forming a lower electrode film (12) on a substrate (11); a niobate-system ferroelectric thin film formation step of forming a niobate-system ferroelectric thin film (13) on the lower electrode film (12); an etch mask formation step of forming a desired etch mask pattern (15') on the niobate-system ferroelectric thin film (13); and a ferroelectric thin film etching step of forming a desired fine pattern (13') of the niobate-system ferroelectric thin film (13) by wet etching using an etchant including an aqueous alkaline solution of a chelating agent.

Anmelder

Firmen

Sumitomo Chemical Company Limited
Sciocs Company Limited
HITACHI METALS, LTD.

Land

🇯🇵 Japan

Fachgebiete