Dünnschichttransistor mit Niedrigem Kontaktwiderstand

Details

Veröffentlichungs-Nr.

EP2874187

Aktenzeichen

EP13193037

Anmeldetag

15. November 2013

Veröffentlichung

1. Januar 2020

Erteilung

1. Januar 2020

Rechtsraum

EP

IPC

H01L29/417H01L29/45H01L29/786H01L29/66H01L21/02H01L23/31

Abstract

The present invention relates to a novel thin film transistor (TFT) comprising a substrate (100) with a gate electrode layer (101) deposited and patterned thereon and a gate insulator layer (102) deposited on the gate electrode layer and the substrate, characterized in that the transistor further comprises (i) a carrier injection layer (103) arranged above the gate insulator layer, (ii) a source/drain (S/D) electrode layer (104) deposited on the carrier injection layer, and (iii) a semiconductor layer (106), methods for the production of such novel TFTs, devices comprising such TFTs, and to the use of such TFTs.

Anmelder

Firmen

Evonik Operations GmbH
Evonik Degussa GmbH
Evonik Industries AG

Land

🇩🇪 Deutschland

Fachgebiete