Halbleiterbauelement und Herstellungsverfahren für das Halbleiterbauelement

Details

Veröffentlichungs-Nr.

EP2884537

Aktenzeichen

EP14197211

Anmeldetag

10. Dezember 2014

Veröffentlichung

30. August 2017

Erteilung

30. August 2017

Rechtsraum

EP

IPC

H01L27/146

Abstract

A semiconductor device and a method of manufacturing a semiconductor device are disclosed. The method includes forming a trench, in a vertical direction of a semiconductor substrate (1) having a plurality of photoelectric converting elements arranged in the semiconductor device, at positions between the photoelectric converting elements that are next to each other, forming a first conductive-material layer (9) in and above the trench by implanting a first conductive material into the trench after an oxide film (8) is formed on an inner wall of the trench, forming a first conductor (9) by removing the first conductive-material layer (9) excluding a first conductive portion of the first conductive-material layer (9) implanted into the trench, and forming an upper gate electrode (3) above the first conductor (9), the upper gate electrode (3) configured to be conductive with the first conductor (9). The semiconductor device includes a semiconductor substrate (1), an image sensor, a trench, a first conductor (9), and an upper gate electrode (3).

Anmelder

Firmen

Ricoh Company, Ltd.
Ricoh Company Ltd.

Land

🇯🇵 Japan

Fachgebiete