Elektronische Schaltungen mit einem MOSFET und einem Dual-Gate-JFET
Anmelder: STMicroelectronics International N.V., Somos Semiconductor, ACCO, Acco Semiconductor, Inc. 🇳🇱
Details
- Veröffentlichungs-Nr.
- EP2892079
- Aktenzeichen
- EP14200578
- Anmeldetag
- 30. Dezember 2014
- Veröffentlichung
- 1. Dezember 2021
- Erteilung
- 1. Dezember 2021
- Rechtsraum
- EP
- IPC
- H01L29/78H01L21/761H01L27/06
Abstract
Electronic circuits and methods are provided for various applications including signal amplification. An exemplary electronic circuit comprises a MOSFET and a dual-gate JFET in a cascode configuration. The dual-gate JFET includes top and bottom gates disposed above and below the channel. The top gate of the JFET is controlled by a signal that is dependent upon the signal controlling the gate of the MOSFET. The control of the bottom gate of the JFET can be dependent or independent of the control of the top gate. The MOSFET and JFET can be implemented as separate components on the same substrate with different dimensions such as gate widths.
Anmelder
- Firmen
- STMicroelectronics International N.V.
Somos Semiconductor
ACCO
Acco Semiconductor, Inc. - Land
- 🇳🇱 Niederlande
Schweizer Gesellschaft des Halbleiterkonzerns STMicroelectronics, die Chips und Sensoren für Automobiltechnik, Industrie und Unterhaltungselektronik entwickelt.
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