Ultradünnes Eingebettetes Halbleiterbauelementgehäuse und Verfahren zur Herstellung davon

Details

Veröffentlichungs-Nr.

EP2916354

Aktenzeichen

EP15157300

Anmeldetag

3. März 2015

Veröffentlichung

22. Juni 2016

Rechtsraum

EP

IPC

H01L21/60H01L23/34H01L23/538H05K1/18H01L23/00

Abstract

A package structure (10) includes a first dielectric layer (14), semiconductor device(s) (12,13) attached to the first dielectric layer (14), and an embedding material (24) applied to the first dielectric layer (14) so as to embed the semiconductor device (12,13) therein, the embedding material (24) comprising one or more additional dielectric layers (26). Vias (30) are formed through the first dielectric layer (14) to the at least one semiconductor device (12,13), with metal interconnects (38) formed in the vias (30) to form electrical interconnections to the semiconductor device (12,13). Input/output (I/O) connections (40) are located on one end of the package structure (10) on one or more outward facing surfaces (18,20) thereof to provide a second level connection to an external circuit. The package structure (10) interfits with a connector on the external circuit to mount the package (10) perpendicular to the external circuit, with the I/O connections (40) being electrically connected to the connector to form the second level connection to the external circuit.

Anmelder

Firma

General Electric Company

Land

🇺🇸 USA

Fachgebiete