Optoelektronische Vorrichtung mit P-N-Übergang, die eine Ionisierung der Dotierungsmittel durch Feldeffekt Ermöglicht

Details

Veröffentlichungs-Nr.

EP2960951

Aktenzeichen

EP15173554

Anmeldetag

24. Juni 2015

Veröffentlichung

26. Februar 2020

Erteilung

26. Februar 2020

Rechtsraum

EP

IPC

H01L31/10H01L33/00H01L31/0224H01L31/0352H01L31/113H01L31/18// H01L33/38H01L33/14H01L27/15

Abstract

Optoelectronic device (100) comprising a mesa structure (124) comprising: - a first (106) and a second (108) semiconductor portions forming a p-n junction, - a first electrode (112) electrically connected to the first portion which is arranged between the second portion and the first electrode, the device further comprising: - a second electrode (116) electrically connected to the second portion, - an element (118, 120) capable of ionizing dopants of the first and/or second portion via generation of an electric field in the first and/or second portion and covering at least part of the lateral flanks of at least part of the first and/or second semiconductor portion and at least part of a space charge zone formed by the first and second portions, upper faces of the first electrode and the second electrode form a substantially planar continuous surface (122).

Anmelder

Firma

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Land

🇫🇷 Frankreich

Fachgebiete