Herstellungsverfahren eines Transistors, in dem das an den Kanal Angelegte Spannungsniveau Erhöht Ist

Details

Veröffentlichungs-Nr.

EP2975646

Aktenzeichen

EP15177074

Anmeldetag

16. Juli 2015

Veröffentlichung

10. Mai 2017

Erteilung

10. Mai 2017

Rechtsraum

EP

IPC

H01L29/66H01L29/786H01L29/78

Abstract

Method for producing a transistor on a layer of a first crystalline semiconductor material for producing a channel, deposited on a dielectric layer, the method comprising the steps of: - epitaxial growth of zones of a second semiconductor material on the layer of a first crystalline semiconductor material, so as to form source and drain blocks with the layer of a first crystalline semiconductor material on either side of the channel, the second semiconductor material having a lattice parameter different from that of the first semiconductor material, - deep amorphization of a portion of the zones of a second semiconductor material so as to retain only a layer of second crystalline semiconductor material on the surface of the source and drain blocks, and amorphization of the zones of the layer of a first semiconductor material located under the zones of second semiconductor material, - recrystallization of the source and drain blocks so that the second semiconductor material imposes its lattice parameter on the source and drain zones.

Anmelder

Firma

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Land

🇫🇷 Frankreich

Fachgebiete