Verfahren zur Bereitstellung einer nMOS-Vorrichtung und einer pMOS-Vorrichtung auf einem Siliciumsubstrat sowie ein Siliciumsubstrat mit einer nMOS-Vorrichtung und einer pMOS-Vorrichtung

Details

Veröffentlichungs-Nr.

EP2978016

Aktenzeichen

EP14178560

Anmeldetag

25. Juli 2014

Veröffentlichung

13. Juni 2018

Erteilung

13. Juni 2018

Rechtsraum

EP

IPC

H01L21/8238H01L27/092H01L29/10H01L21/02

Abstract

A method for providing an nMOS device and a pMOS device on a silicon substrate, comprising: a. providing trenches in a dielectric layer on the silicon substrate, at least a first trench defining an nMOS region and a second trench defining a pMOS region, the trenches extending through the dielectric layer and abutting a surface of the substrate; b. growing a first seed layer in the first trench on the surface; c. growing a common strain relaxed buffer layer in the first and the second trench, the strain relaxed buffer layer comprising silicon germanium; d. growing a common channel layer comprising germanium (Ge) in the first trench and the second trench on the common strain relaxed buffer layer; wherein the properties of the first seed layer an the common strained relaxed buffer layer are predetermined such that the common channel layer comprises tensile strain or is unstrained in the nMOS region and comprises compressive strain in the pMOS region; and associated substrate.

Anmelder

Firma

IMEC VZW

Land

🇧🇪 Belgien

Fachgebiete