Leistungshalbleitermodul und Verfahren zur Herstellung davon

Details

Veröffentlichungs-Nr.

EP2988328

Aktenzeichen

EP14181407

Anmeldetag

19. August 2014

Veröffentlichung

12. Mai 2021

Erteilung

12. Mai 2021

Rechtsraum

EP

IPC

H01L23/14H01L23/492H01L23/538

Abstract

The present disclosure describes a power electronics module comprising a lead frame in which a chip of a first semiconductor device is embedded, a first PCB mounted on top of the lead frame and the chip of the first semiconductor device, and a support frame mounted on top of the PCB, the support frame comprising a cavity in which the chip of a second semiconductor device is embedded, wherein the chips of the first semiconductor device and the second semiconductor device are positioned on top of each other, and the first PCB comprises a first electrically conducting path between the chips of the first semiconductor device and the second semiconductor device.

Anmelder

Firmen

ABB Schweiz AG
ABB Technology Oy

Land

🇨🇭 Schweiz

Fachgebiete