Verfahren zur Herstellung eines Halbleiterbauelements
Anmelder: Renesas Electronics Corporation 🇯🇵
Details
- Veröffentlichungs-Nr.
- EP3002780
- Aktenzeichen
- EP15184691
- Anmeldetag
- 10. September 2015
- Veröffentlichung
- 21. Juni 2017
- Erteilung
- 21. Juni 2017
- Rechtsraum
- EP
- IPC
- H01L21/28H01L21/30H01L29/792H01L27/115H01L21/336
Abstract
A semiconductor device including a nonvolatile memory cell and a field effect transistor together is improved in performance. In a method of manufacturing a semiconductor device, a hydrogen-containing insulating film is formed before heat treatment of a semiconductor wafer, the hydrogen-containing insulating film covering a gate electrode and a gate insulating film in a region that will have a memory cell therein, and exposing a region that will have therein a MISFET configuring a peripheral circuit. Consequently, hydrogen in the hydrogen-containing insulating film is diffused into an interface between the gate insulating film and the semiconductor substrate, and thereby a defect at the interface is selectively repaired.
Anmelder
- Firma
- Renesas Electronics Corporation
- Land
- 🇯🇵 Japan
Japanischer Halbleiterhersteller mit Sitz in Tokio, spezialisiert auf Mikrocontroller, analoge Bauelemente und Halbleiterlösungen unter anderem für die Automobil- und Industrieelektronik.
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Fachgebiete
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Calderbank, Thomas Roger
NoneLondon