Verfahren zur Herstellung Piezoelektrischer Mems-Vorrichtungen
Anmelder: Analog Devices, Inc. 🇺🇸
Details
- Veröffentlichungs-Nr.
- EP3009793
- Aktenzeichen
- EP15189732
- Anmeldetag
- 14. Oktober 2015
- Veröffentlichung
- 27. September 2017
- Erteilung
- 27. September 2017
- Rechtsraum
- EP
- IPC
- G01C19/5769H01L41/08G01C19/5684G01C19/00G01C19/5677
Abstract
A single photo mask can be used to define the three critical layers for the piezoelectric MEMS device, specifically the top electrode layer, the piezoelectric material layer, and the bottom electrode layer. Using a single photo mask removes the misalignment source caused by using multiple photo masks. Furthermore, in certain exemplary embodiments, all electrical interconnects use underpass interconnect. This simplifies the process for defining the device electrodes and the process sequence for achieving self-alignment between the piezoelectric element and the top and bottom electrodes. This self-alignment is achieved by using an oxide hard mask to etch the critical region of the top electrode, the piezoelectric material, and the bottom electrode with one mask and different etch chemistries depending on the layer being etched.
Anmelder
- Firma
- Analog Devices, Inc.
- Land
- 🇺🇸 USA
US-amerikanisches Halbleiterunternehmen mit irischer Konzerngesellschaft. Analog Devices entwickelt analoge, gemischte und digitale Signalverarbeitungschips für Industrie-, Kommunikations- und Automobilanwendungen.
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Beck, Simon Antony
NoneLondon