Pv-Element
Anmelder: Sharp Kabushiki Kaisha 🇯🇵
Details
- Veröffentlichungs-Nr.
- EP3029740
- Aktenzeichen
- EP15197334
- Anmeldetag
- 1. Dezember 2015
- Veröffentlichung
- 17. Juli 2019
- Erteilung
- 17. Juli 2019
- Rechtsraum
- EP
- IPC
- H01L31/0224H01L31/0236H01L31/0376H01L31/0747H01L31/20
Abstract
A photovoltaic device is provided that prevents a short circuit in an p-n junction even if the distance between the electrodes on the n-type semiconductor strips and the electrodes on the p-type semiconductor strips is reduced. A photovoltaic device includes n-type amorphous semiconductor strips 102 and p-type amorphous semiconductor strips 102p provided on the back face of a semiconductor substrate 101. Separate electrodes 103 spaced apart from each other are provided on each semiconductor strip of at least one of the group of n-type amorphous semiconductor strips 102n and the group of p-type amorphous semiconductor strips 102p. A conductive part 302 is provided on the surfaces of the electrodes 103 and electrically connects the electrodes 103.
Anmelder
- Firma
- Sharp Kabushiki Kaisha
- Land
- 🇯🇵 Japan
Japanischer Elektronikkonzern mit Sitz in Sakai bei Osaka, seit 2016 mehrheitlich zu Foxconn gehörend. Aktiv in Displaytechnik (LCD, OLED), Unterhaltungselektronik, Haushaltsgeräten sowie Halbleiter- und Solartechnologie.
22.800 Patente in unserer Datenbank