Verfahren zur Temporären Waferbindung und Dünnschichtwaferherstellungsverfahren
Anmelder: Shin-Etsu Chemical Co., Ltd. 🇯🇵
Details
- Veröffentlichungs-Nr.
- EP3038148
- Aktenzeichen
- EP15201534
- Anmeldetag
- 21. Dezember 2015
- Veröffentlichung
- 2. August 2017
- Erteilung
- 2. August 2017
- Rechtsraum
- EP
- IPC
- H01L21/683C09J7/02B24B37/30
Abstract
A method for temporarily bonding a wafer to a support via a temporary bonding arrangement is provided. The arrangement is a composite temporary adhesive layer consisting of a non-silicone thermoplastic resin layer (A) which is releasably bonded to the wafer, a thermosetting siloxane polymer layer (B) laid thereon, and a thermosetting siloxane-modified polymer layer (C) releasably bonded to the support. The method comprises the steps of providing a wafer laminate having a thermosetting silicone composition layer (B') formed on the resin layer (A) which has been formed on the wafer, providing a support laminate having a siloxane-containing composition layer (C') formed on the support, joining and heating layer (B') and layer (C') in vacuum for bonding and curing the layers together.
Anmelder
- Firma
- Shin-Etsu Chemical Co., Ltd.
- Land
- 🇯🇵 Japan
Japanisches Chemieunternehmen mit Sitz in Tokio. Shin-Etsu Chemical stellt Siliziumwafer für Halbleiter, Silikonprodukte, PVC und weitere Spezialchemikalien für Elektronik-, Bau- und Industrieanwendungen her.
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