Verfahren zur Bereitstellung eines Implantierten Abschnitts in einer Halbleiterstruktur

Details

Veröffentlichungs-Nr.

EP3041031

Aktenzeichen

EP15202051

Anmeldetag

22. Dezember 2015

Veröffentlichung

26. August 2020

Erteilung

26. August 2020

Rechtsraum

EP

IPC

H01L21/266H01L21/8238H01L21/84

Abstract

According to an aspect of the present inventive concept there is provided a method of providing an implanted region in a semiconductor structure including a first region and a second region, the method comprising: providing a first implantation mask covering the first region of the semiconductor structure, the first implantation mask including a first sacrificial layer, wherein the first sacrificial layer is formed as a spin-on-carbon (SOC) layer, and a second sacrificial layer, wherein the second sacrificial layer is formed as a spin-on-glass (SOG) layer, subjecting the semiconductor structure to an ion implantation process wherein an extension of the first implantation mask is such that ion implantation in the first region is counteracted and ion implantation in the second region is allowed wherein the second region is implanted, forming a third sacrificial layer covering the second region of the semiconductor structure, wherein the third sacrificial layer includes carbon, removing the second sacrificial layer at the first region by etching, wherein the third sacrificial layer protects the second region from being affected by said etching, and removing the first sacrificial layer at the first region and the third sacrificial layer at the second region by etching.

Anmelder

Firma

IMEC VZW

Land

🇧🇪 Belgien

Fachgebiete