Halbleiterbauelement

Details

Veröffentlichungs-Nr.

EP3054482

Aktenzeichen

EP16154420

Anmeldetag

5. Februar 2016

Veröffentlichung

26. Oktober 2016

Rechtsraum

EP

IPC

H01L27/02H01L27/06

Abstract

The ringing of a switching waveform of a semiconductor device is restrained. For example, an interconnect (L5) is laid which functions as a source of a power transistor (Q3) and a cathode of a diode (D4), and further functioning as a drain of a power transistor (Q4) and an anode of a diode (D3). In other words, a power transistor and a diode coupled to this power transistor in series are formed in the same semiconductor chip; and further an interconnect functioning as a drain of the power transistor and an interconnect functioning as an anode of the diode are made common to each other. This structure makes it possible to decrease a parasite inductance between the power transistor and the diode coupled to each other in series.

Anmelder

Firma

Renesas Electronics Corporation

Land

🇯🇵 Japan

Fachgebiete