Verfahren zur Übertragung einer Schicht aus einem Einkristallsubstrat

Details

Veröffentlichungs-Nr.

EP3098839

Aktenzeichen

EP16171740

Anmeldetag

27. Mai 2016

Veröffentlichung

4. März 2020

Erteilung

4. März 2020

Rechtsraum

EP

IPC

H01L21/762H01L21/02

Abstract

The invention relates to a method for transferring a layer (11) from a single-crystal substrate, called donor substrate (1), onto a receiver substrate (2), comprising: - the supply of said single-crystal donor substrate (1), said substrate having a notch oriented in a first direction of the crystal and a weakness region (10) bounding the layer (11) to be transferred, - the bonding of the single-crystal donor substrate (1) onto the receiver substrate (2), the main surface (12) of the donor substrate opposite to the weakness region (10) with respect to the layer to be transferred (11) being at the bonding interface, - the detachment of the donor substrate (1) along the weakness region (10), said method being characterized in that the donor substrate (1) has, on the main surface (12) bonded to the receiver substrate (2), an array of atomic steps extending essentially in a second direction of the crystal different from said first direction.

Anmelder

Firma

Soitec

Land

🇫🇷 Frankreich

Fachgebiete