Halbleiterbauelement und Verfahren zur Ansteuerung eines Halbleiterbauelements

Details

Veröffentlichungs-Nr.

EP3109904

Aktenzeichen

EP16169787

Anmeldetag

16. Mai 2016

Veröffentlichung

22. Februar 2017

Rechtsraum

EP

IPC

H01L29/423G11C11/56H01L29/792H01L27/115G11C16/04G11C16/14G11C16/34

Abstract

A first potential and a second potential lower than the first potential are applied to a first end of a memory gate electrode part of the nonvolatile memory and to a second end of the memory gate electrode part, respectively, so that a current is caused to flow in a direction in which the memory gate electrode part extends, then, a hole is injected from the memory gate electrode part into a charge accumulating part below it, therefore, an electron accumulated in the charge accumulating part is eliminated. By causing the current to flow through the memory gate electrode part of a memory cell region as described above, Joule heat can be generated to heat the memory cell. Consequently, in the erasing by a FN tunneling method in which the erasing characteristics degrade at a low temperature, the erasing speed can be improved by heating the memory gate electrode part.

Anmelder

Firma

Renesas Electronics Corporation

Land

🇯🇵 Japan

Fachgebiete